| 摘要 |
A power semiconductor device includes: a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type formed on a first semiconductor layer and alternately arranged along at least one direction parallel to an upper face of the first semiconductor layer; a fourth semiconductor layer of the second conductivity type selectively formed in an upper face of the second and third semiconductor layers; and a control electrode formed above the second, third and fourth semiconductor layers via a gate insulating film. The control electrode includes: first portions periodically arranged along a first direction selected from arranging directions of the third semiconductor layer, the third semiconductor layer has a shortest arrangement period in the first direction, and second portions periodically arranged along a second direction, the second direction being parallel to the upper face of the first semiconductor layer and crossing the first direction. The arrangement period of the first portions is m times the arrangement period of the third semiconductor layer, where m is an integer not less than 2.
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