发明名称 RF nanoswitch
摘要 An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.
申请公布号 US7816662(B2) 申请公布日期 2010.10.19
申请号 US20090619393 申请日期 2009.11.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM DONG-HA;NAM KUANG-WOO;YUN SEOK-CHUL;SONG IN-SANG
分类号 H01L29/06 主分类号 H01L29/06
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