| 摘要 |
A silicon epitaxial wafer obtained by growing a silicon epitaxial layer on a surface of a silicon wafer having a diameter of at least 300 mm produced by slicing a silicon single crystal ingot doped with boron and germanium grown by the Czochralski method, wherein boron is doped to be at a concentration of 8.5×1018 (atoms/cm3) or higher and germanium is doped to satisfy a relational expression (formula 1) below. 3 × ( 4.64 × 10 - 24 · [ Ge ] - 2.69 × 10 - 23 · [ B ] ) 5.43 × r 2 × t epi ( t sub ) 2 ≤ 26. [ Forrmula 1 ]
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