发明名称 Low-power operation of static memory in a read-only mode
摘要 A static random access memory (SRAM) operable that is biased at lower power supply voltages in a read-only mode than in a read/write mode. The SRAM can be embedded within a large-scale integrated circuit, for example in combination with a microprocessor and associated circuitry. Upon system control circuitry determining that an SRAM array can be operated in a read-only mode, for example that a large number of read operations are likely to be performed prior to writing to the SRAM array, the power supply voltages applied to the SRAM array are reduced. The array power supply voltage and periphery power supply voltage can be at separate voltages and separately reduced from the read/write mode to the read-only mode. The read-only mode can be readily used for instruction cache memories, and for local instruction memories associated with an embedded microcontroller.
申请公布号 US7817490(B1) 申请公布日期 2010.10.19
申请号 US20090423378 申请日期 2009.04.14
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 SRIDHARA SRINIVASA RAGHAVAN
分类号 G11C5/14;G11C11/00 主分类号 G11C5/14
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