发明名称 |
MIGFET circuit with ESD protection |
摘要 |
An electrostatic discharge (ESD) protected circuit is coupled to a power supply voltage rail and includes a multiple independent gate field effect transistor (MIGFET), a pre-driver, and a hot gate bias circuit. The MIGFET has a source/drain path coupled between an output pad and the power supply voltage rail and has a first gate terminal and a second gate terminal. The pre-driver circuit has an output. The hot gate bias circuit is coupled to the first gate terminal of the MIGFET, and the output of the pre-driver circuit is coupled to the second gate terminal of the MIGFET. The hot gate bias circuit is configured to apply a bias voltage to the first gate terminal of the MIGFET during an ESD event that increases the breakdown voltage of the MIGFET so as to better withstand the ESD event.
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申请公布号 |
US7817387(B2) |
申请公布日期 |
2010.10.19 |
申请号 |
US20080971591 |
申请日期 |
2008.01.09 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
KHAZHINSKY MICHAEL G.;MATHEW LEO;MILLER JAMES W. |
分类号 |
H02H9/00;H01L23/62 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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