发明名称 |
Method of forming non-volatile memory having charge trap layer with compositional gradient |
摘要 |
A flash memory device and method of forming a flash memory device are provided. The flash memory device includes a silicon nitride layer having a compositional gradient in which the ratio of silicon to nitrogen varies through the thickness of the layer. The silicon nitride layer having a compositional gradient of silicon and nitrogen provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
|
申请公布号 |
US7816205(B2) |
申请公布日期 |
2010.10.19 |
申请号 |
US20080256119 |
申请日期 |
2008.10.22 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BALSEANU MIHAELA;ZUBKOV VLADIMIR;XIA LI-QUN;NOORI ATIF;ARGHAVANI REZA;WITTY DEREK R.;AL-BAYATI AMIR |
分类号 |
H01L21/336;H01L21/31;H01L27/088;H01L27/105 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|