发明名称 Thin film transistor array and method of manufacturing the same
摘要 A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.
申请公布号 US7816712(B2) 申请公布日期 2010.10.19
申请号 US20070986330 申请日期 2007.11.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOUNG JONG-HYUN;PARK HONG-SICK;YOUN JOO-AE;HONG SUN-YOUNG;KIM BONG-KYUN;SHIN WON-SUK;LEE BYEONG-JIN
分类号 H01L31/113 主分类号 H01L31/113
代理机构 代理人
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