SEMICONDUCTOR DEVICE WITH RECESS GATE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device with recess gate and a method for manufacturing the same are provided to prevent refresh deterioration due to GID(Gate Induced Drain Leakage) by improving the quality of a gate insulating layer through a plasma process. CONSTITUTION: A substrate(31) equipped with a recess pattern(34) is prepared. A gate electrode covers the recess pattern. A threshold voltage control layer(35) is formed on the recess pattern. A source and drain region are formed on both sides of the gate electrode. A gate insulating layer(36) is interposed between the gate electrode and the substrate.