Carbon nanotube transistor having buried gate structure and manufacturing method thereof,申请号KR20030012360-传众专利搜索

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发明名称	Carbon nanotube transistor having buried gate structure and manufacturing method thereof
摘要
申请公布号	KR100988080(B1)	申请公布日期	2010.10.18
申请号	KR20030012360	申请日期	2003.02.27
申请人		发明人
分类号	H01L29/732	主分类号	H01L29/732
代理机构		代理人
主权项
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