| 摘要 |
The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer (14), a magnetization free layer (18), and a spacer layer (16) including an insulating layer (22) provided between the magnetization pinned layer (14) and the magnetization free layer (18) and current paths (21) penetrating into the insulating layer (22). A process of forming the spacer layer (16) in the method includes depositing a first metal layer (m1) forming the metal paths (21), depositing a second metal layer (m2) on the first metal layer (m1), performing a pretreatment of irradiating the second metal layer (m2) with an ion beam or a RF plasma of a rare gas, and converting the second metal layer (m2) into the insulating layer (22) by means of supplying an oxidation gas or a nitriding gas. |
