| 摘要 |
PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to efficiently remove a contaminated layer on the surface by forming a preprocess layer including fluorine on the surface of a mesa structure before a passivation layer is formed. CONSTITUTION: An n type semiconductor layer(103) is formed on a substrate(102). An active layer(104) is formed on the n type semiconductor layer. A p type semiconductor layer(105) is formed on the active layer. A mesa structure(106) is formed by mesa-etching the part of the p type semiconductor layer, the active layer, and the n type semiconductor layer. A preprocess layer(120) including fluorine is formed on the mesa structure. A passivation layer(130) is formed on the preprocess layer.
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