| 摘要 |
PROBLEM TO BE SOLVED: To provide a Heusler alloy material which has high spin polarization and low magnetic anisotropy and, therefore, can be applied to a magnetization free layer or a magnetization fixed layer of a highly magnetic field-sensitive magnetoresistive element, and to provide a magnetoresistive element and a magnetic device using the Heusler alloy material. SOLUTION: The Heusler alloy material has a composition ratio of Co<SB>2</SB>(Fe<SB>x</SB>Mn<SB>1-x</SB>)Si alloy (x=0.1 to 0.9). The Heusler alloy material is formed via a substrate layer made of magnesium oxide or chromium oxide and, thereafter, is formed through heat treatment process. COPYRIGHT: (C)2011,JPO&INPIT
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