发明名称 SPUTTERING TARGET AND MAGNETRON SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target which increases deposition speed by enhancing PTF of the target having low PTF and reduced leakage magnetic flux, enables the use of a thick target and can improve productivity. SOLUTION: In the target used for a magnetron sputtering apparatus, a backing plate 12 made of a CoCr alloy that is a material having a flux permeability higher than that of the target plate 11 is joined to a side opposite to the sputtering surface of the target plate 11 composed of Co base sintering alloy containing Cr and Pt. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010229500(A) 申请公布日期 2010.10.14
申请号 JP20090078735 申请日期 2009.03.27
申请人 MITSUBISHI MATERIALS CORP 发明人 JOHO MASANORI;SHIRAI TAKANORI
分类号 C23C14/34 主分类号 C23C14/34
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