发明名称 |
SPIN TORQUE TRANSFER MAGNETIC TUNNEL JUNCTION STRUCTURE |
摘要 |
The present disclosure provides a semiconductor memory device. The device includes a bottom electrode over a semiconductor substrate; an anti-ferromagnetic layer disposed over the bottom electrode; a pinned layer disposed over the anti-ferromagnetic layer; a barrier layer disposed over the pinned layer; a first ferromagnetic layer disposed over the barrier layer; a buffer layer disposed over the first ferromagnetic layer, the buffer layer including tantalum; a second ferromagnetic layer disposed over the buffer layer; and a top electrode disposed over the second ferromagnetic layer.
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申请公布号 |
US2010258886(A1) |
申请公布日期 |
2010.10.14 |
申请号 |
US20090422579 |
申请日期 |
2009.04.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG YU-JEN;KAO YA-CHEN;LIN CHUN-JUNG |
分类号 |
H01L29/82;H01L21/00 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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