发明名称 |
3D CHIP-STACK WITH FUSE-TYPE THROUGH SILICON VIA |
摘要 |
Programmable fuse-type through silicon vias (TSVs) in silicon chips are provided with non-programmable TSVs in the same chip. The programmable fuse-type TSVs may employ a region within the TSV structure having sidewall spacers that restrict the cross-sectional conductive path of the TSV adjacent a chip surface contact pad. Application of sufficient current by programming circuitry causes electromigration of metal to create a void in the contact pad and, thus, an open circuit. Programming may be carried out by complementary circuitry on two adjacent chips in a multi-story chip stack. |
申请公布号 |
US2010261318(A1) |
申请公布日期 |
2010.10.14 |
申请号 |
US20100822459 |
申请日期 |
2010.06.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FENG KAI DI;HSU LOUIS LU-CHEN;WANG PING-CHUAN;YANG ZHIJIAN |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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