发明名称 |
SUPERJUNCTION COLLECTORS FOR TRANSISTORS & SEMICONDUCTOR DEVICES |
摘要 |
<p>Superjunction collectors for transistors are discussed in this application. According to one embodiment, a bipolar transistor having a superjunction collector structure can comprise a collector electrode, a base electrode, an emitter electrode, a collector-base space charge region, and a superjunction collector. The collector-base space charge region can be disposed in electrical communication between the collector electrode and the base electrode. The superjunction collector region can be disposed in the collector-base space charge region. The superjunction collector region can comprise a plurality of alternating horizontally disposed P-type and N-type layers. The layers can be horizontally disposed layers that are layered on top of each other. The P-type and N-type layers can be doped with different types of doping levels. Other aspects, embodiments, and features are also discussed and claimed.</p> |
申请公布号 |
WO2010118215(A1) |
申请公布日期 |
2010.10.14 |
申请号 |
WO2010US30367 |
申请日期 |
2010.04.08 |
申请人 |
GEORGIA TECH RESEARCH CORPORATION;YUAN, JIAHUI;CRESSLER, JOHN, D. |
发明人 |
YUAN, JIAHUI;CRESSLER, JOHN, D. |
分类号 |
H01L29/737 |
主分类号 |
H01L29/737 |
代理机构 |
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