| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of controlling the quantity of exposure capable of further accurately controlling the quantity of exposure even in an environment where a contamination film grows. <P>SOLUTION: This method of controlling the quantity of exposure used for controlling the quantity of exposure in exposing a substrate to a reflection image of a pattern formed on a mask includes: a reflectivity acquisition process of acquiring initial reflectivity R0 of an opening of the pattern and measured reflectivity R of the opening of the pattern after using the mask; and a process of calculating a coefficient X for correcting the quantity of exposure based on expression 1: X=A×ä(R0/R)-1}+1, using a proportional constant A determined based on the change of a reflection characteristic due to the change of a mask surface condition. <P>COPYRIGHT: (C)2011,JPO&INPIT |
