| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of forming an impurity low-density diffusion region close to a gate electrode in a second region, and to provide a method for manufacturing the semiconductor device. SOLUTION: A nonvolatile semiconductor memory 10 includes: a first MOS field effect transistor 18 constituted by having a first gate electrode 22, a pair of first impurity diffusion regions 24, and a pair of first side wall portions 26; and a second MOS field effect transistor 20 constituted by having a second gate electrode 42, a pair of second impurity diffusion regions 44, and a pair of second side wall portions 46. Second lower insulating films 54 of the second side wall portions 46 have a thickness thicker than that of silicon thermal oxidation films 34 of the first side wall portions 26 by the thickness of silicon oxide films 62 on an upper surface 12A of a p-type semiconductor substrate 12, and the silicon oxide films 62 do not have a part covering the side walls of the second gate electrodes 42 from a side. COPYRIGHT: (C)2011,JPO&INPIT |
