| 摘要 |
The invention relates to a dark-field detector for an electron microscope. The detector comprises a photodiode for detecting the scattered electrons, with an inner electrode and an outer electrode. As a result of the resistive behaviour of the surface layer the current induced by a scattered electron, e.g. holes, are divided over the electrodes, so that a current I1 and I2 is induced, the sum of the current proportional to the energy of the impinging electron and the normalized ratio a function of the radial position where the electron impinges.
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