SOLUTION-PROCESSED HIGH MOBILITY INORGANIC THIN-FILM TRANSISTORS

摘要

This invention provides various semiconductor and dielectric components and/or transistor devices. More specifically, this invention discloses solution-phase method of preparing a thin film transistor device, said method providing a first fluid medium containing an inorganic semiconductor component selected from Group 12-Group 15 metals; contacting said first fluid medium with a substrate component, annealing said inorganic semiconductor component to provide a semiconductor film; providing a second fluid medium compnsing a dielectric component, and coupling said dielectric component to said inorganic semiconductor film.