| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a back-illuminated solid-state image sensor capable of improving image quality by suppressing images deterioration due to an etalon phenomena. <P>SOLUTION: The back-illuminated solid-state image sensor includes a semiconductor substrate 4 including a light incidence surface at a rear side, and a plurality of charge transfer electrodes 2 provided on a light detection surface at a side opposite to the light incidence surface of the semiconductor substrate 4. In the back-illuminated solid-state image sensor, a plurality of openings OP for light transmission are formed between adjacent charge transfer electrodes 2. Also, the plurality of openings OP for light transmission may be formed in the respective charge transfer electrodes 2. <P>COPYRIGHT: (C)2011,JPO&INPIT |
