MAGNETORESISTIVE ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY AND SPATIAL LIGHT MODULATOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive element with vertical magnetic anisotropy which has superior magnetic characteristics by containing an RE-TM alloy, and can maintain the magnetic characteristics.

SOLUTION: The magnetoresistive element 1 has a magnetization fixed layer 11, an intermediate layer 12 and a magnetization reversal layer 13 laminated, wherein at least one of the magnetization fixed layer 11 and magnetization reversal layer 13 contains the RE-TM alloy, and an insulating layer 6 for insulating a pair of electrodes 2 and 3 connected above and below is disposed in contact with the magnetoresistive element 1 and made of silicon oxide.

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