| 摘要 |
PROBLEM TO BE SOLVED: To provide a development-loading evaluation pattern for resist for an electron beam, with which only an influence of development loading can be extracted from a photomask having a close pattern region where an influence of fogging in electron beam exposure and the influence of development loading are exerted, without increasing processes and development conditions can be optimized; to provide an evaluation method using the development-loading evaluation pattern; and to provide a mask for development loading evaluation, and a developing method. SOLUTION: The development-loading evaluation pattern includes a plurality of dummy pattern parts B, C having pattern density corresponding to an electron beam exposure amount, and size measurement pattern parts A, A' provided in the vicinity of the dummy pattern parts. COPYRIGHT: (C)2011,JPO&INPIT |
