SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE

摘要

Disclosed is a chemical compound semiconductor substrate suited for the formation of multiple different types of devices such as HBTs and FETs on a single semiconductor substrate. Said semiconductor substrate is provided with: a first semiconductor; a carrier trap layer that is formed on top of the first semiconductor and has electron capture centers or hole capture centers; a second semiconductor that is epitaxially grown on top of the carrier trap layer and functions as a channel for free electrons or free holes to move in; and a third semiconductor that includes either an N-P-N or a P-N-P layered semiconductor structure epitaxially grown on top of the second semiconductor.