| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being downsized in the thickness direction thereof, to provide a method of manufacturing the semiconductor device, and to provide an electronic device. <P>SOLUTION: The semiconductor device includes: a multilayer wiring structure 31 having a through part 35; and a through electrode 33 provided in the multilayer wiring structure 31 and having first and second connection faces 41A and 42A exposed from faces 31A and 31B of the multilayer wiring structure 31. An electronic component 22 is housed in the through part 35 so as not to project from the first and second connection faces 41A and 42A, and the electronic component 22 and the through electrode 33 are electrically connected through a wiring pattern 25 directly connected to an electrode pad 45 of the electronic component 22 and the first connection face 41A of the through electrode. <P>COPYRIGHT: (C)2011,JPO&INPIT |
