发明名称 ELECTRON BEAM LITHOGRAPHY APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve the accuracy of lithography by suppressing the movement of a beam position on a sample surface due to blanking deflection. SOLUTION: In the electron beam lithography apparatus, condenser lenses 21, 22 and a blanking deflector 31 are provided on an electron source 11 side of an aperture mask 41 closest to the electron source 11 and a projection lens 23 is provided on an downstream side nearer to a beam progressing axis direction than the aperture mask 41, and the blanking deflector 31 controls ON-OFF of electron beams. The blanking deflector 31 consists of at least two stages of electrostatic deflection electrodes 311, 312 arranged between the condenser lenses 21, 22 and the aperture mask 41, and the deflection electrodes 311, 312 are driven by allowing the deflection directions to be opposite so that the movement due to blanking of a cross-over image formed by the condenser lenses 21, 22 and the projection lens 23 can be reduced. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010232204(A) 申请公布日期 2010.10.14
申请号 JP20090074926 申请日期 2009.03.25
申请人 TOSHIBA CORP;NUFLARE TECHNOLOGY INC 发明人 OGASAWARA MUNEHIRO;NISHIMURA CHIKASUKE;TAMAMUSHI SHUICHI
分类号 H01L21/027 主分类号 H01L21/027
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