METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor which reduces production cost and improves productivity using aluminum wiring material with low resistance. SOLUTION: The method for manufacturing the thin film transistor includes steps of: forming a film of pure aluminum or aluminum alloy as a first layer by sputtering using Ar gas; forming a second layer containing aluminum nitride partially in addition to the first layer material, by means of the sputtering using Ar+N2 mixed gas or Ar+NH 3 mixed gas, in the upper layer of the first layer; and electrically connecting a transparent film electrode and a second layer of a first electrode through a contact hole formed separately. COPYRIGHT: (C)2011,JPO&INPIT