THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY PANEL AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce a leakage current in a polysilicon TFT without increasing the number of processes. SOLUTION: Source and drain regions of active layers 22 of a thin-film transistor 20 are formed on a glass substrate 21 of a liquid crystal display panel 15 of a mobile phone and are mounted on a circuit region C and a pixel region P, respectively. The source and drain regions are formed so that an impurity concentration of boron is in a range from 2.5×1018/cm3to 5.5×1018/cm3and an activation ratio of the impurity is in a range from 1-7%. COPYRIGHT: (C)2011,JPO&INPIT