| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage device having high yield and reducing a failure in processing of a storage section between wiring, and also to provide a method for manufacturing the same. SOLUTION: The nonvolatile storage device has a first electrode, a second electrode, and a first storage section provided between the first electrode and the second electrode and having a first storage layer changing in resistance. The storage device is manufactured in such a way that a first electrode film 110f as the first electrode and a first storage section film 130f as the first storage section are laminated, the films are processed in strip extending in a first direction, and a layer 581 of a predetermined density is embedded, a second electrode film 140f as the second electrode is formed thereon, a mask layer 150 having a density higher than that of the layer of predetermined density is formed on the film 140f, the second electrode film 140f is processed in strip extending in a second direction, a portion exposed from a sacrificial layer 581 of the first storage section film 130f is removed, and the first storage section film 130f is processed like a pillar, and then, the sacrificial layer 581 is removed to expose the first storage section film 130f, and the first storage section film 130f is removed. COPYRIGHT: (C)2011,JPO&INPIT
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