Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.
申请公布号
WO2010117703(A2)
申请公布日期
2010.10.14
申请号
WO2010US28998
申请日期
2010.03.29
申请人
APPLIED MATERIALS, INC.;OLSEN, CHRISTOPHER S.;SWENBERG, JOHANES;GANGULY, UDAYAN;GUARINI, THERESA KRAMER;CHO, YONAH
发明人
OLSEN, CHRISTOPHER S.;SWENBERG, JOHANES;GANGULY, UDAYAN;GUARINI, THERESA KRAMER;CHO, YONAH