| 摘要 |
<p>PURPOSE: A critical dimension correction method of a photo mask is provided to easily correct a critical dimension by etching a pattern surface by using a cleaning solution. CONSTITUTION: A critical dimension correction method measures the critical dimension of a mask pattern which is transcribed to a wafer formed on a substrate(S110). The critical dimension uniformity, which has an error critical dimension, is detected by using the measured dimension(S120). The error critical dimension is corrected by executing a cleaning process which recesses the critical dimension of the defected pattern(S130). The suitability of the critical dimension correction is detected by inspecting the critical width of the mask pattern(S140).</p> |
