| 摘要 |
<p>PURPOSE: A critical width correction method of a photomask is provided to execute a critical width correction process when an uniformity error and a critical dimension error are generated. CONSTITUTION: A critical dimension correction method includes a blank-mask including a pattern target layer on a light penetration board(S10). A first transmittance map, which represents the transmittance distribution of the blank-mask, is generated by measuring the transmittance rate of the blank-mask(S20). A photomask which has a mask pattern on the light penetration substrate, is manufactured by executing a patterning process on the blank mask(S30). A second transmittance map, which represents the transmittance rate of the photomask, is generated by measuring the transmittance rate of the(S40).</p> |
