发明名称 THREE DIMENSIONAL MEMORY DEVICE
摘要 PURPOSE: A 3D memory device is provided so that the manufacturing cost can be reduced in comparison with the other 3D memory device formed into the multilayer. CONSTITUTION: A 3D memory device comprises the semiconductor substrate(100), the insulating layer(150) between the plane word line(160) and the gate, activity post(180), and information storage film(170) is included. The semiconductor substrate comprises the common source area. The insulating layer is by turns laminated between plane word lines and gate on the semiconductor substrate.
申请公布号 KR20100111165(A) 申请公布日期 2010.10.14
申请号 KR20090029590 申请日期 2009.04.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NAKANISHI TOSHIRO;HAN JEONG HEE;CHAE, SOO DOO
分类号 H01L21/8229 主分类号 H01L21/8229
代理机构 代理人
主权项
地址