发明名称 |
THREE DIMENSIONAL MEMORY DEVICE |
摘要 |
PURPOSE: A 3D memory device is provided so that the manufacturing cost can be reduced in comparison with the other 3D memory device formed into the multilayer. CONSTITUTION: A 3D memory device comprises the semiconductor substrate(100), the insulating layer(150) between the plane word line(160) and the gate, activity post(180), and information storage film(170) is included. The semiconductor substrate comprises the common source area. The insulating layer is by turns laminated between plane word lines and gate on the semiconductor substrate.
|
申请公布号 |
KR20100111165(A) |
申请公布日期 |
2010.10.14 |
申请号 |
KR20090029590 |
申请日期 |
2009.04.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAKANISHI TOSHIRO;HAN JEONG HEE;CHAE, SOO DOO |
分类号 |
H01L21/8229 |
主分类号 |
H01L21/8229 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|