发明名称 INFRARED SOLID-STATE IMAGE PICKUP ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that an output distribution becomes large since a voltage drop amount in wiring differs at every pixel in a thermal infrared solid-state image pickup element in which diodes are two-dimensionally disposed in a matrix shape and which is driven by a constant current in row units. <P>SOLUTION: The thermal infrared solid-state image pickup element is provided with a variable resistance element (MOS transistor, for example) (101) arranged in pixel pitch units in a vertical power wire (504), a sample and hold circuit (102) holding a potential of the vertical power wire, a second vertical signal line (103) having the same resistance as a vertical signal line, a current source (104) connected to the second vertical signal line, and a circuit (105) controlling a resistance value of the variable resistance element (101) based on the potential of the sample and hold circuit (102) and that of the second vertical signal line (103). <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010232251(A) 申请公布日期 2010.10.14
申请号 JP20090075699 申请日期 2009.03.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 UENO MASAFUMI
分类号 H01L27/14;G01J1/02;G01J1/42;G01J1/44;H01L31/10 主分类号 H01L27/14
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