| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having low switching loss and high turn-off tolerance while ON voltage of a trench-type IGBT is kept low like that of an IEGT, and simultaneously improving design and controllability of the gate threshold voltage, and also to provide a method of manufacturing the same. <P>SOLUTION: In the semiconductor device, a plurality of trenches 7, each having a planar shape, are arranged in stripe geometry, while channel deformation regions 8 are disposed between neighboring trenches 7 and between channel regions 2 and a substrate layer 1 formed of a semiconductor substrate 1. Each channel deformation region 8 is doped with an n-type impurity, whose concentration is higher than that of a substrate layer 1, and has an impurity concentration distribution in the direction parallel to the surface of the substrate 1, having higher concentration in the sidewall side of the trench 7 and becoming lower concentration as the position separates from the trench 7. <P>COPYRIGHT: (C)2011,JPO&INPIT |
