| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting diode which improves light-emission efficiency at the injection of a high-density current, and a manufacturing method for the nitride semiconductor light-emitting diode. <P>SOLUTION: The light-emitting diode at least includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, and a light-emitting layer in the active layer is composed of a plurality of layers where at least two or more layers having different In mixed crystal ratios are formed in contact with each other. <P>COPYRIGHT: (C)2011,JPO&INPIT |
