发明名称 SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent deterioration of a sealing member due to thermal radiation from a heater. SOLUTION: This substrate processing apparatus includes: a processing container; a substrate mounting portion which is arranged in the processing container, and on which a substrate is mounted; the heater arranged in the substrate mounting portion and configured to heat the substrate; a thermal radiation attenuation portion adjacent to the processing container; and a gas supply pipe connected to a gas introduction portion through a sealing member for supplying a processing gas to the inside of the processing container therethrough, wherein the thermal radiation attenuation portion is arranged on a line connecting the heater and the sealing member. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010232637(A) 申请公布日期 2010.10.14
申请号 JP20100022974 申请日期 2010.02.04
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 HARADA KOICHIRO
分类号 H01L21/31;C23C14/50;C23C16/46;H01L21/683 主分类号 H01L21/31
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