发明名称 |
SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of a sealing member due to thermal radiation from a heater. SOLUTION: This substrate processing apparatus includes: a processing container; a substrate mounting portion which is arranged in the processing container, and on which a substrate is mounted; the heater arranged in the substrate mounting portion and configured to heat the substrate; a thermal radiation attenuation portion adjacent to the processing container; and a gas supply pipe connected to a gas introduction portion through a sealing member for supplying a processing gas to the inside of the processing container therethrough, wherein the thermal radiation attenuation portion is arranged on a line connecting the heater and the sealing member. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2010232637(A) |
申请公布日期 |
2010.10.14 |
申请号 |
JP20100022974 |
申请日期 |
2010.02.04 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
HARADA KOICHIRO |
分类号 |
H01L21/31;C23C14/50;C23C16/46;H01L21/683 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|