| 摘要 |
PROBLEM TO BE SOLVED: To improve an AC operation by reducing contact resistance between a metal gate electrode and a polysilicon gate electrode of a field-effect transistor having an MIPS structure. SOLUTION: A semiconductor device 1 has a field-effect transistor on a semiconductor substrate 10. The field-effect transistor has gate insulating film 25 and 27 and gate electrodes 63 and 71. Further, the gate electrodes 63 and 71 have laminated structures including first electrode layers 22 made of first metal, second electrode layers 26 and 34 made of second metal, and third electrode layers 62 and 70 formed of silicon layers. The second metal is a material having a work function for relaxing band discontinuity of the first electrode layers 22 and third electrode layers 62 and 70 with respect to a majority carrier of the silicon layers. COPYRIGHT: (C)2011,JPO&INPIT
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