| 摘要 |
PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor composite substrate which can suppress the generation of voids etc. in a bonded interface, to provide a group-III nitride semiconductor substrate, and to provide a method of manufacturing the group-III nitride semiconductor composite substrate. SOLUTION: This group-III nitride semiconductor composite substrate 1 has a basic material 10 with conductivity formed of a conductive material having a melting point not lower than 1100°C, a group-III nitride layer 20 formed on the basic material 10, and a group-III nitride single-crystal film 30 formed on the group-III nitride layer 20. The group-III nitride layer 20 has a wave comprising periodic irregularity on a surface contacting with the group-III nitride layer single-crystal film 30 of the group-III nitride layer 20. The one-dimensional power spectrum density of the wave, at a space wavelength region of not smaller than 0.1 (/μm) and smaller than 1 (/μm) is smaller than 500 nm<SP>3</SP>. COPYRIGHT: (C)2011,JPO&INPIT
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