发明名称 HIGH RESOLUTION PHOTOMASK
摘要 A film photomask comprises a polymer substrate such as a photosensitive polymer than can be darkened. The photomask substrate is sensitive to light within a first wavelength range and is initially transparent to light within a second wavelength range that is utilized for product exposure operations to pattern a product using photomask. During a mask exposure operation, select regions of the photomask are exposed to light within the first wavelength range to selectively photodarken regions of the photomask substrate according to a desired pattern. The photodarkened regions are darkened sufficient to block light within the second wavelength range used for patterning a product through the photomask. Thus, no chemical processing is required to create a mask pattern. Moreover, the pattern is defined within/through the polymer material. The photomask may further comprise a filter that is applied to at least one side thereof for blocking light within the first wavelength range.
申请公布号 US2010261098(A1) 申请公布日期 2010.10.14
申请号 US20100758588 申请日期 2010.04.12
申请人 BATTELLE MEMORIAL INSTITUTE 发明人 HOGUE ERIC L.;STANFIELD TIMOTHY J.
分类号 G03F1/00;G03F7/20 主分类号 G03F1/00
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