发明名称 |
METHOD TO ENHANCE CHARGE TRAPPING |
摘要 |
Methods of improving charge trapping are disclosed. One such method includes forming an oxide-nitride-oxide tunnel stack and a silicon nitride layer on the oxide- nitride-oxide tunnel stack. This silicon nitride layer is implanted with ions. These ions may function as electron traps or as fields. The silicon nitride layer may be part of a flash memory device. |
申请公布号 |
WO2010071834(A3) |
申请公布日期 |
2010.10.14 |
申请号 |
WO2009US68823 |
申请日期 |
2009.12.18 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES;RAMAPPA, DEEPAK;SHIM, KYU-HA |
发明人 |
RAMAPPA, DEEPAK;SHIM, KYU-HA |
分类号 |
H01L27/115;H01L21/265;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|