发明名称 |
ELECTRO-STATIC DISCHARGE CIRCUITS AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: An ESD(Electro-Static Discharge) protection circuit and a manufacturing method thereof are provided to delay a base width widening phenomenon due to a Kirk effect by expanding a drift region in contact with a drain region. CONSTITUTION: A first conductive well(20) is formed on a semiconductor substrate. A second conductive well(30) is separated from the first conductive well on the semiconductor substrate. A first drift region(40) is formed on the first conductive well. A second drift region(50) is formed on the second conductive region and the first conductive well. A second conductive source region is formed on the first drift region. A second conductive drain region is separated from the end of the first conductive well on the second drift region. A gate electrode is formed on the semiconductor substrate between the second conductive source region and the second drift region.
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申请公布号 |
KR20100111022(A) |
申请公布日期 |
2010.10.14 |
申请号 |
KR20090029377 |
申请日期 |
2009.04.06 |
申请人 |
DONGBU HITEK CO., LTD. |
发明人 |
PARK, JAE YOUNG;KIM, JONG MIN |
分类号 |
H01L23/60;H01L27/04 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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