发明名称 ELECTRO-STATIC DISCHARGE CIRCUITS AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: An ESD(Electro-Static Discharge) protection circuit and a manufacturing method thereof are provided to delay a base width widening phenomenon due to a Kirk effect by expanding a drift region in contact with a drain region. CONSTITUTION: A first conductive well(20) is formed on a semiconductor substrate. A second conductive well(30) is separated from the first conductive well on the semiconductor substrate. A first drift region(40) is formed on the first conductive well. A second drift region(50) is formed on the second conductive region and the first conductive well. A second conductive source region is formed on the first drift region. A second conductive drain region is separated from the end of the first conductive well on the second drift region. A gate electrode is formed on the semiconductor substrate between the second conductive source region and the second drift region.
申请公布号 KR20100111022(A) 申请公布日期 2010.10.14
申请号 KR20090029377 申请日期 2009.04.06
申请人 DONGBU HITEK CO., LTD. 发明人 PARK, JAE YOUNG;KIM, JONG MIN
分类号 H01L23/60;H01L27/04 主分类号 H01L23/60
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