| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress degradation of a characteristic of a semiconductor device or a photoelectric conversion device due to a heavy-metal contaminant. <P>SOLUTION: This method of manufacturing a semiconductor device includes: a first process of forming a first gettering layer 11a on a surface on a first side of a semiconductor substrate; a second process of forming an oxide film on a surface on a second side of the semiconductor substrate on the side opposite to the first side by heating the semiconductor substrate 11 in an oxidative atmosphere after the first process; a third process of removing at least a part of the first gettering layer after the second process; a fourth process of forming a polysilicon layer on the second side of the semiconductor substrate and forming, with polysilicon, a second gettering layer on the first side of the semiconductor substrate; and a fifth process of forming a gate insulation film and a gate electrode 15 of an MOS transistor by patterning the polysilicon layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
