ELECTRODE, METHOD FOR FORMING THE SAME, SEMICONDUCTOR SILICON WAFER, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an electrode with satisfactory Schottky characteristic and high stability, in which Schottky junction used for evaluation of electric characteristics or the like can be easily formed, a method for forming the electrode, and the like. SOLUTION: The electrode Schottky-joined onto a semiconductor silicon wafer includes an Al base alloy containing one or more elements having physical properties such that work function is 4.0 eV or less. In the method for forming the electrode, the electrode is formed by vacuum deposition. COPYRIGHT: (C)2011,JPO&INPIT