| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of achieving a high ON/OFF ratio and a stable operation while suppressing an increase in element area, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes a BOX layer 1, an SOI layer 2 formed on the BOX layer 1, and a transistor 10 of partial depletion type which is formed at the SOI layer 2. The transistor 10 includes a gate electrode 14 formed on the SOI layer 2 with an insulating film in between, an N-type source 15 or drain 16 formed at the SOI layer 2 under both sides of the gate electrode 14, and an N-type impurity layer 17 provided at the lower part of the source 15. The impurity layer 17 contacts a body region 2, and has an N-type impurity concentration lower than that of the source 15. COPYRIGHT: (C)2011,JPO&INPIT
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