| 摘要 |
Provided is an image sensor including a drive transistor as a voltage buffer, which can suppress generation of secondary electrons from a channel of the drive transistor to prevent generation of image defects caused by dark current. The transistor includes a gate electrode formed on a substrate, source and drain regions formed in the substrate exposed to both sides of the gate electrode, respectively, and an electric field attenuation region formed on the drain region and partially overlapping the gate electrode. |
