| 摘要 |
A semiconductor memory device includes a plurality of memory cell arrays each includes a plurality of memory cells, the plurality of memory cell arrays being stacked on a semiconductor substrate to form a three-dimensional structure, a first well formed in the semiconductor substrate and having a first conductivity type, an element isolation insulating film including a bottom surface shallower than a bottom surface of the first well in the first well, and buried in the semiconductor substrate, a second well including a bottom surface shallower than the bottom surface of the first well in the first well, formed along a bottom surface of at least a portion of the element isolation insulating film, and made of an impurity having a second conductivity type, and a contact line electrically connected to the first well. |
