PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING DEVICE

摘要

Disclosed is a process for manufacturing a semiconductor device, in which the contents of a metal and reactive gases in a film can be improved without the need of increasing the number of steps. Also disclosed is a sputtering device. One embodiment of the process comprises: a step of placing a substrate on a substrate holder in a treatment chamber; and a film formation step of applying an electric power to a target in the treatment chamber while introducing a first reactive gas and a second reactive gas having higher reactivity than that of the first reactive gas into the treatment chamber to sputter the target, thereby forming a film containing the target material on the substrate. In the film formation step, at least the first reactive gas is introduced through a first gas inlet which is arranged adjacent to the target, and the second reactive gas is introduced through a second gas inlet which is arranged at a position which is more distant from the target compared to the first gas inlet.