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发明名称
Verfahren zur Herstellung eines Halbleiterbauelements als Transistor mit einem Metallgatestapel mit großemεund einem kompressiv verspannten Kanal
摘要
申请公布号
DE102008049717(B4)
申请公布日期
2010.10.14
申请号
DE20081049717
申请日期
2008.09.30
申请人
ADVANCED MICRO DEVICES INC.;AMD FAB 36 LIMITED LIABILITY COMPANY & CO. KG
发明人
GRIEBENOW, UWE;HOENTSCHEL, JAN;FROHBERG, KAI
分类号
H01L21/336;H01L21/8238;H01L27/092;H01L29/78
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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