| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce eddy current loss in a thin-film induction element due to an eddy current generated on a silicon substrate, in a semiconductor device which is referred to as "CSP", having a spiral thin-film induction element. <P>SOLUTION: A passivation film 3 and a first protective film 5 are formed on a silicon substrate 1. A second protective film 7 is formed on the upper surface, exclusing the surrounding of the first protective film. A spiral thin-film induction element 11 is formed on the upper surface of the second protective film. In this case, the total thickness of the first and second protective films can reduce the eddy current loss in the thin-film induction element, due to the eddy current generated in the silicon substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT |
